MMBR901L

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L DESCRIPTION ·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 2V 30 mA 0.3 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 25 2 V V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.05 μA hFE DC Current Gain COB Output Capacitance IC= 5mA ; VCE= 5V IE= 0 ; VCB= 10V; f= 1MHz 50 200 1.0 pF fT Current-Gain—Bandwidth Product IC= 15mA ; VCE= 10V; f= 1GHz 3.8 GHz Gpe Common-Emitter Amplifier Gain NFmin Minimum Noise Figure IC= 5mA ; VCC= 6V; f= 1GHz IC= 5mA ; VCE= 6V; f= 1GHz 12 dB 1.9 dB isc website：www.iscsemi.cn 2 ...