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MJH11017
Silicon PNP Darlington Power Transistor
Description
isc Silicon
PNP
Darlington Power
Transistor
MJH11017 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -10A = -4.0V(Max)@ IC= -15A ·Complement to Type MJH11018 ·Minimum Lot-to-Lot variations for robust device p...
Inchange Semiconductor
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