MJE8503

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage 1400 800 V V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous ICM Collector Current-Peak 5A 10 A IB Base Current-Continuous 4A IBM Base Current-Peak 8 PC Collector Power Dissipation@TC=25℃ 80 A W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Product Specification MJE8503 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE8503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃ VCE(sat)-2 VBE(sat) ICEV Collector-Emitter Saturation Voltage Base...