MPSW01, MPSW01A
One Watt High Current Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATING...
MPSW01, MPSW01A
One Watt High Current
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSW01
30
MPSW01A
40
Collector −Base Voltage MPSW01 VCBO 40 Vdc
MPSW01A
50
Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
5.0 1000 1.0 8.0
Vdc mAdc
W mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR 3
2 BASE
1 EMITTER
123
STRAIGHT LEAD BULK PACK
12 3
TO−92 1 WATT (TO−226)
CASE 29−10 STYLE 1
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
MPS W01x AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 6
1
x = 01A Devices A = A...
