MPSW01A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW01/D One Watt High Current Transistors NPN Silicon COLLECTOR 3 2 BASE MPSW01 MPSW01A* *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage MPSW01 MPSW01A VCEO 30 40 Vdc Collector – Base Voltage MPSW01 MPSW01A VCBO 40 50 Vdc Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 1000 1.0 8.0 Vdc mAdc Watts mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 Thermal Resistance, Junction to Case RqJC 50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic °C/W °C/W OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) MPSW01 MPSW01A Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) MPSW01 MPSW01A Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MPSW01 MPSW01A Preferred devices are Motorola recommended choices for future use and best overall value. 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) Symbol Min ...