SiHL620

Power MOSFET IRL620, SiHL620 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 200 VGS = 5.0 V 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single 0.80 TO-220AB D S D G G S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Available RoHS* COMPLIANT Ease of paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRL620PbF SiHL620-E3 IRL620 SiHL620 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 5.0 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperatu...