INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Com...
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series
APPLICATIONS ·Designed for high-speed switching applications, such as
switching
regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
D45VH 1
-50
VCEV
Collector-Emitter Voltage
D45VH 4 D45VH 7
-70 -80
V
D45VH 10 -100
D45VH 1
-30
VCEO
Collector-Emitter Voltage
D45VH 4 D45VH 7
-45 -60
V
D45VH 10 -80
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-15 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-20 83 150 -55~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case
1.5 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Product Specification
D45VH Series
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistors
isc Product Specification
D45VH Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
D45VH 1
-30
VCEO(SUS)
Collector-Emitter Sustaining Voltage
D45VH 4 D45VH 7
IC= -25mA ;IB= 0
-45 V
-60
D45VH 10
-80
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A
VCE(sat)-2 VBE(sat)
ICEV IEBO
Collecto...