isc Silicon PNP Power Transistors
D45C11
DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Sp...
isc Silicon
PNP Power
Transistors
D45C11
DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C11 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching
regulators; low and high frequency inverters/ converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
-90
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-1
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 4.2 ℃/W
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isc Silicon
PNP Power
Transistors
D45C11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -50mA
-0.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A ;IB= -100mA
-1.3 V
ICES
Collector Cutoff Current
VCE= -90V, VBE= 0
-10 μA
IEBO
Emitter Cutoff Cu...