K2220

2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C Symbol VDSX VGSS ID I DR Pch*1 Tch Tstg Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source 2SK2220 breakdown voltage 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Symbol Min V(BR)DSX 180 200 V(BR)GSS ±20 VGS(off) 0.15 Typ — — — — Drain to source saturation voltage Forward transfer admittance VDS(sat) |yfs| — 0.7 — 1.0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Test Ciss Coss Crss t on t off — — — — — 600 800 8 250 90 Max Unit —V — —V 1.45 V 12 V 1.4 S — pF — pF — pF — ns — ns Test conditions ID = 10 mA, VGS = –10 V IG = ±100 µA, VDS = 0 ID = 100 mA VDS = 10 V ID = 8 A, VGD = 0 V*1 ID = 3 A VDS = 10 V*1 VGS = –5 V VDS = 10 V f = 1 M...