isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Stati...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.035Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Plused
100
A
PD
Total Dissipation @TC=25℃
120
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.833 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
40N06
isc website:www.iscsemi.cn
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isc N-Channel MOSFET
Transistor
40N06
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250...