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36N06
N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current capability ·Low gate charge ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltag...
Inchange Semiconductor
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