25N06

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 25A ;VGS= 0 VGS= 10V; ID= 12.5A VGS= ±20V;VDS= 0 VDS=60V; VGS= 0 MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.5 V 0.065 Ω ±100 nA 10 µA · isc website：www.iscsemi.cn 2 isc & iscsemi is register...