MTB17A03V8

CYStech Electronics Corp. Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET MTB17A03V8 BVDSS ID RDSON(TYP) VGS=10V, ID=6A VGS=4.5V, ID=4A 30V 7A 16mΩ 25mΩ Description The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Equivalent Circuit MTB17A03V8 Outline DFN3×3 G：Gate D：Drain S：Source Pin 1 Ordering Information Device MTB17A03V8-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTB17A03V8 CYStek Product Specification CYStech Electronics Corp. The following characteristics apply to each MOSFET. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation Single device operation Single device value at dual operation Symbol VDS VGS ID IDM PD Operating Junction and Storage Temperature Range Tj, Tstg Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. :...