N-Channel MOSFET
NEW PRODUCT
Product Summary
V(BR)DSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2....
Description
NEW PRODUCT
Product Summary
V(BR)DSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.7A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Backlighting Power Management Functions DC-DC Converters
POWERDI3333
DMN10H170SFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Features
100% Unclamped Inductive Switch (UIS) test in production Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher
density end products Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI3333 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.034 grams (approximate)
S Pin 1 S S G
D
Top View
D D D D Bottom View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMN10H170SFG-7 DMN10H170SFG-13
Compliance Standard Standard
Case POWERDI3333 POWE...
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