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DMN10H170SFG

Diodes

N-Channel MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2....


Diodes

DMN10H170SFG

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NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters POWERDI3333 DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features  100% Unclamped Inductive Switch (UIS) test in production  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: POWERDI3333  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See diagram  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.034 grams (approximate) S Pin 1 S S G D Top View D D D D Bottom View G S Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H170SFG-7 DMN10H170SFG-13 Compliance Standard Standard Case POWERDI3333 POWE...




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