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T835 Dataheets PDF



Part Number T835
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description logic level and standard 8A Triacs
Datasheet T835 DatasheetT835 Datasheet (PDF)

BTA08, BTB08, T810, T835 Snubberless™, logic level and standard 8 A Triacs A2 G A2 A1 A2 A1 A2 G TO-220AB A1 A2 G TO-220AB Insulated A1 A2 G IPAK A2 A1 A2 G DPAK A2 A1 A2 G D²PAK Datasheet − production data Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits.

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BTA08, BTB08, T810, T835 Snubberless™, logic level and standard 8 A Triacs A2 G A2 A1 A2 A1 A2 G TO-220AB A1 A2 G TO-220AB Insulated A1 A2 G IPAK A2 A1 A2 G DPAK A2 A1 A2 G D²PAK Datasheet − production data Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTABTB08_xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontroller. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 VRMS) complying with UL standards (file ref.: E81734). Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V • Triggering gate current, IGT (Q1) 5 to 50 mA June 2014 This is information on a product in full production. DocID7472 Rev 8 1/18 www.st.com Characteristics 1 Characteristics BTA08, BTB08, T810, T835 Symbol Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated) Parameter Value Unit On-state rms current IT(rms) (full sine wave) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range IPAK, DPAK, TO-220AB TO-220ABIns. F = 50 Hz F = 60 Hz F = 120 Hz tp = 20 µs Tc = 110 °C Tc = 100 °C t = 20 ms t = 16.7 ms tp = 10 ms Tj = 125 °C Tj = 125 °C Tj = 125 °C 8A 80 A 84 36 A²s 50 A/µs 4 1 - 40 to + 150 - 40 to + 150 A W °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3 quadrants) Symbol Test conditions Quadrant T8 BTA08 / BTB08 T810 T835 TW SW CW BW Unit IGT (1) VGT VGD IH (2) VD = 12 V RL = 30 Ω VD = VDRM RL = 3.3 k Ω Tj = 125 °C IT = 100 mA IL IG = 1.2 IGT I - II - III I - II - III I - II - III I - III II MAX. 10 35 MAX. 5 10 35 50 1.3 MIN. 0.2 MAX. 15 35 10 15 35 50 25 50 10 25 50 70 MAX. 30 60 15 30 60 80 mA V V mA mA dV/dt (2) VD = 67% VDRM gate open Tj = 125 °C (dV/dt)c = 0.1 V/µs Tj = 125 °C (dI/dt)c (2) (dV/dt)c = 10 V/µs Tj = 125 °C Without snubber Tj = 125 °C MIN. MIN. 40 400 20 40 400 1000 V/µs 5.4 - 3.5 5.4 - - 2.8 - 1.5 2.98 - - A/ms - 4.5 - - 4.5 7 2/18 DocID7472 Rev 8 BTA08, BTB08, T810, T835 Characteristics Symbol Table 3. Standard (4 quadrants) Test conditions Quadrant IGT (1) VGT VGD IH (2) VD = 12 V, RL = 33 Ω VD = VDRM, RL = 3.3 k Ω , Τj = 125 °Χ IT = 500 mA IL IG.


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