Document
BTA08, BTB08, T810, T835
Snubberless™, logic level and standard 8 A Triacs
A2
G
A2
A1
A2
A1 A2 G
TO-220AB
A1 A2 G TO-220AB Insulated
A1 A2 G
IPAK
A2
A1 A2 G
DPAK
A2
A1 A2 G
D²PAK
Datasheet − production data
Description
Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc.
The Snubberless versions (BTABTB08_xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performances.
Logic level versions are designed to interface directly with low power drivers such as microcontroller.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 VRMS) complying with UL standards (file ref.: E81734).
Features
• On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM/VRRM
600 to 800 V
• Triggering gate current, IGT (Q1) 5 to 50 mA
June 2014
This is information on a product in full production.
DocID7472 Rev 8
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Characteristics
1 Characteristics
BTA08, BTB08, T810, T835
Symbol
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Parameter
Value
Unit
On-state rms current IT(rms) (full sine wave)
ITSM
I²t
dI/dt
IGM PG(AV)
Tstg Tj
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t value for fusing
Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns Peak gate current
Average gate power dissipation
Storage junction temperature range Operating junction temperature range
IPAK, DPAK, TO-220AB TO-220ABIns. F = 50 Hz F = 60 Hz
F = 120 Hz tp = 20 µs
Tc = 110 °C
Tc = 100 °C t = 20 ms t = 16.7 ms tp = 10 ms
Tj = 125 °C
Tj = 125 °C Tj = 125 °C
8A
80 A
84
36 A²s
50 A/µs
4 1 - 40 to + 150 - 40 to + 150
A W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3 quadrants)
Symbol
Test conditions
Quadrant
T8 BTA08 / BTB08 T810 T835 TW SW CW BW
Unit
IGT (1) VGT
VGD IH (2)
VD = 12 V RL = 30 Ω
VD = VDRM RL = 3.3 k Ω
Tj = 125 °C IT = 100 mA
IL IG = 1.2 IGT
I - II - III I - II - III I - II - III
I - III II
MAX. 10 35 MAX.
5 10 35 50 1.3
MIN.
0.2
MAX. 15 35 10 15 35 50
25 50 10 25 50 70 MAX.
30 60 15 30 60 80
mA V V mA
mA
dV/dt (2)
VD = 67% VDRM gate open Tj = 125 °C
(dV/dt)c = 0.1 V/µs Tj = 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Without snubber Tj = 125 °C
MIN. MIN.
40 400 20 40 400 1000 V/µs
5.4 - 3.5 5.4 -
-
2.8 - 1.5 2.98 -
- A/ms
- 4.5 -
- 4.5 7
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BTA08, BTB08, T810, T835
Characteristics
Symbol
Table 3. Standard (4 quadrants)
Test conditions
Quadrant
IGT (1)
VGT VGD IH (2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 k Ω , Τj = 125 °Χ
IT = 500 mA
IL IG.