2N5400

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors PNP high-voltage transistors Product specification 2N5400; 2N5401 FEATURES Low current (max. 300 mA) High voltage (max. 150 V). APPLICATIONS General purpose switching and amplification Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N5551. PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 2 MAM280 1 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage 2N5400 2N5401 collector-emitter voltage 2N5400 2N5401 peak collector current total power dissipation DC current gain 2N5400 2N5401 transition frequency 2N5400 2N5401 CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = −5 V IC = −10 mA; VCE = −10 V; f = 100 MHz MIN. − − − − − − 40 60 100 100 MAX. UNIT −130 −160 V V −120 −150 −600 630 V V mA mW − − 400 MHz 300 MHz 1997 May 22 2 Philips Semiconductors PNP high-voltage transistors Product specification 2N5400; 2N5401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage 2N5400 2N5401 collect...