SS8050

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 40 25 5 1.5 300 150 -55~150 UNIT V V V A mW ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= 100μA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=800mA; IB= 80mA VBE(sat) base-emitter saturation voltage IC= 800mA; IB=80mA ICBO collector cut-off current I CEO collector cut-off current VCB =40 V,IE = 0 VCE= 20V, IB=0 IEBO Emitter Cutoff Current VEB=5V; IC=0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 1V hFE-2 DC Current Gain fT Transition frequency IC=0.8A ; VCE= 1V VCE=10V, IC= 50mA，f=30MHz MIN MAX UNIT 40 V 25 V 5V 0.5 V 1.2 V 0.1 uA 0.1 uA 0.1 uA 120 400 40 100 MHz Classification of hFE-1 ...