C8050

S STC8050 0 NPN Silicon Transistor 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to STC8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 40 6 1.5 1 150 65 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Test Condition IC= 100µA, IE=0 IC= 2mA, IB=0 IE= 100µA, IC=0 VCB= 35V, IE=0 VEB= 6V, IC=0 VCE= 1V, IC= 5mA VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA IC= 800mA, IB= 80mA IC= 800mA, IB= 80mA VCE= 1V, IC= 10mA VCB= 10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= 10V, IC= -50mA Min. 40 40 6 45 85 40 100 Typ. 170 160 80 0.28 0.98 0.66 15 200 Max. 100 100 Units V V V nA nA 300 0.5 V 1.2 V 1.0 V pF MHz hFEClassification Classification hFE2 A 85 ...