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BT151-1000RT

NXP

SCR

TO-220AB BT151-1000RT SCR 13 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlle...


NXP

BT151-1000RT

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Description
TO-220AB BT151-1000RT SCR 13 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance. 2. Features and benefits High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Very high bidirectional blocking voltage capability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 Tj junction temperature IT(RMS) RMS on-state current half sine wave; Tmb ≤ 134 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 1000 V - - 1000 V - - 120 A - - 150 °C - - 12 A - 2 15 mA Scan or click this QR code to view the latest information for this product NXP Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode mb 2 A anode 3 G gate mb A mou...




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