Document
FFAF60UA60DN — Ultrafast ll Dual Diode
November 2014
FFAF60UA60DN
60 A, 600 V, UItrafast II Dual Diode
Features
• Ultrafast Recovery, Trr < 90ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant
Applications
• Boost Diode in PFC and SMPS • Welder, UPS and Motor Control Application
Description
The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application as welder and UPS application.
Pin Assignments
12
3
1. Anode 2. Cathode 3. Anode
Absolute Maximum Ratings Per leg at TC = 25oC unless otherwise noted
Symbol VRRM VRWM VR IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
@ TC = 45oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics Per leg at TC = 25oC unless otherwise noted
Symbol
Parameter
RJC
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Part Number
FFAF60UA60DN
Top Mark
F60UA60DN
Package Packing Method Reel Size
TO-3PF
Tube
N/A
Ratings 600 600 600 30 180
-65 to +175
Ratings 2.4
Tape Width
N/A
Unit V V V A A oC
Unit oC/W
Quantity
30
©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2
1
www.fairchildsemi.com
FFAF60UA60DN — Ultrafast ll Dual Diode
Electrical Characteristics Per leg at TC = 25oC unless otherwise noted
Symbol VFM1
IRM1 trr Irr Qrr WAVL
IF = 30 A IF = 30 A VR = 600 V VR = 600 V
Parameter
IF = 30 A, diF/dt = 200 A/s
Avalanche Energy ( L = 40 mH)
TC TC
= =
25oC 125oC
TC TC
= =
25oC 125oC
TC = 25oC
Min.
-
-
-
20
Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
Typ.
-
-
-
-
Max.
2.2 2.0
100 150
90 8 360
-
Unit
V
A
ns A nC mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2
2
www.fairchildsemi.com
FFAF60UA60DN — Ultrafast ll Dual Diode
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop vs. Forward Current
100
TC = 125oC 10
TC = 25oC
TC = 75oC 1
Figure 4. Typical Reverse Current vs. Reverse Voltage
10
TC = 125oC
1 TC = 75oC
0.1 TC = 25oC
Reverse Current , IR [A]
Forward Current, IF [A]
0.1 0.0 0.5 1.0 1.5 Forward Voltage, VF [V]
Figure 5.Typical Junction Capacitance
2.0
200 Typical Capacitance at 0V = 205pF
150
Capacitances , Cj [pF]
100
50
Reverse Recovery Current, Irr [A]
0 0.1 1 10
Reverse Voltage, VR [V]
Figure 7. Typical Reverse Recovery Current vs. diF/dt
12
9 TC = 75oC
6
3
TC = 12.