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FFAF60UA60DN Dataheets PDF



Part Number FFAF60UA60DN
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description UItrafast II Dual Diode
Datasheet FFAF60UA60DN DatasheetFFAF60UA60DN Datasheet (PDF)

FFAF60UA60DN — Ultrafast ll Dual Diode November 2014 FFAF60UA60DN 60 A, 600 V, UItrafast II Dual Diode Features • Ultrafast Recovery, Trr < 90ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and SMPS • Welder, UPS and Motor Control Application Description The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. T.

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FFAF60UA60DN — Ultrafast ll Dual Diode November 2014 FFAF60UA60DN 60 A, 600 V, UItrafast II Dual Diode Features • Ultrafast Recovery, Trr < 90ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and SMPS • Welder, UPS and Motor Control Application Description The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application as welder and UPS application. Pin Assignments 12 3 1. Anode 2. Cathode 3. Anode Absolute Maximum Ratings Per leg at TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave @ TC = 45oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Per leg at TC = 25oC unless otherwise noted Symbol Parameter RJC Maximum Thermal Resistance, Junction to Case Package Marking and Ordering Information Part Number FFAF60UA60DN Top Mark F60UA60DN Package Packing Method Reel Size TO-3PF Tube N/A Ratings 600 600 600 30 180 -65 to +175 Ratings 2.4 Tape Width N/A Unit V V V A A oC Unit oC/W Quantity 30 ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2 1 www.fairchildsemi.com FFAF60UA60DN — Ultrafast ll Dual Diode Electrical Characteristics Per leg at TC = 25oC unless otherwise noted Symbol VFM1 IRM1 trr Irr Qrr WAVL IF = 30 A IF = 30 A VR = 600 V VR = 600 V Parameter IF = 30 A, diF/dt = 200 A/s Avalanche Energy ( L = 40 mH) TC TC = = 25oC 125oC TC TC = = 25oC 125oC TC = 25oC Min. - - - 20 Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms Typ. - - - - Max. 2.2 2.0 100 150 90 8 360 - Unit V A ns A nC mJ Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2 2 www.fairchildsemi.com FFAF60UA60DN — Ultrafast ll Dual Diode Typical Performance Characteristics Figure 3. Typical Forward Voltage Drop vs. Forward Current 100 TC = 125oC 10 TC = 25oC TC = 75oC 1 Figure 4. Typical Reverse Current vs. Reverse Voltage 10 TC = 125oC 1 TC = 75oC 0.1 TC = 25oC Reverse Current , IR [A] Forward Current, IF [A] 0.1 0.0 0.5 1.0 1.5 Forward Voltage, VF [V] Figure 5.Typical Junction Capacitance 2.0 200 Typical Capacitance at 0V = 205pF 150 Capacitances , Cj [pF] 100 50 Reverse Recovery Current, Irr [A] 0 0.1 1 10 Reverse Voltage, VR [V] Figure 7. Typical Reverse Recovery Current vs. diF/dt 12 9 TC = 75oC 6 3 TC = 12.


F60UA60DN FFAF60UA60DN PL2301GD


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