Dual N-Channel MOSFET
Dual N-Channel 75-V (D-S) MOSFET
SiS902DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.186 at VGS = 10 V ...
Description
Dual N-Channel 75-V (D-S) MOSFET
SiS902DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.186 at VGS = 10 V 75
0.228 at VGS = 4.5 V
ID (A) 4e 4e
Qg (Typ.) 2.1 nC
PowerPAK 1212-8
3.30 mm
D1 8
D1
7
D2 6 D2
5
S1 1
G1 2
3.30 mm
S2 3 G2
4
Bottom View
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm Profile
100 % Rg Tested 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
POL
D1
D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
75 ± 20
V
TC = 25 °C
4e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
4e 3a, b 2.4a, b
A
Pulsed Drain Current
IDM 8
Avalanche Current Single-Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
2 0.2
mJ
TC = 25 °C
15.4
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
9.9 3.1a, b
W
TA = 70 °C
2a, b
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 55 to 150 260
°C
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not pla...
Similar Datasheet