MBRB2045CT-B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate Diodes MBRB0CT-B SCHOTTKY BARRIER RECTIFIER FEATURE  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop TO-263-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VRRM VRWM VR(RMS) IO IFSM PD RθJA TJ Tstg Parameter Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current @8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 45 31.5 20 150 2 50 125 -55~+150 Unit V V A A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage =V(BR) IR 0.1mA 45 Reverse current =IR VR 45V )RUZDUGYROWDJH=VF* IF 10A Total capacitance ==Ctot VR 4V,f 1MHz *Pulse test Typ 420 Max 0.1 0.7 Unit V mA V pF www.cj-elec.com 1 A-1,Jul,2015 Typical Characteristics FORWARD CURRENT I (mA) F 20000 10000 Forward Characteristics 10000 1000 100 Reverse Characteristics T =100℃ a REVERSE CURRENT I (uA) R =25℃ =100℃ T a T a 1000 500 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE V (mV) F 10 T =25℃ a 1 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE...