JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT-B SCHOTTKY BARRIER RE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT-B
SCHOTTKY BARRIER RECTIFIER
FEATURES z
Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-220F
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IO
IFSM
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current@ Tc=125℃ Non-Repetitive peak forward surge current 8.3ms half sine wave
PD RΘJA
Tj Tstg
Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
100
70 20 150 2 50 150 -55~+150
Unit
V
V A A W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=1mA
100 V V
Reverse current
IR VR=100V
9
0.1 mA
Forward voltage
VF1*
IF1=10A
0.85 V
Forward voltage
VF2*
IF2=20A
0.95 V
*Pulse test
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1
A-1,Nov,2015
Typical Characteristics
FORWARD CURRENT IF (mA)
20000 10000
Forward Characteristics
=25℃
=100℃
1000
T a
T a
100
10 0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE VF (mV)
Capacitance Charac...
