A2I20D020GNR1

Freescale Semiconductor Technical Data Document Number: A2I20D020N Rev. 0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats. 1800–2200 MHz  Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) PAE (%) 1800 MHz 31.0 19.7 1900 MHz 31.0 21.7 2000 MHz 31.1 22.1 2100 MHz 31.4 21.1 2200 MHz 32.0 19.6 1. All data measured in fixture with device soldered to heatsink. ACPR (dBc) –44.3 –45.0 –45.2 –45.2 –44.8 Features  Extremely Wide RF Bandwidth  RF Decoupled Drain Pins Reduce Overall Board Space  On--Chip Matching (50 Ohm Input, DC Blocked)  Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) A2I20D020NR1 A2I20D020GNR1 1400–2200 MHz, 2.5 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--17 PLASTIC A2I20D020NR1 TO--270WBG--17 PLASTIC A2I20D020GNR1 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF. Select Documentation/Application Notes...