Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
SBL1030,35,40,45,50,60
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
1. CATHODE 2. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IO
IFSM
PD RΘJA
Tj Tstg
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current@ Tc=95℃ Non-Repetitive peak forward surge current
8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
SBL 1030
30
21
SBL 1035
35
24.5
Value SBL SBL 1040 1045
40 45
28 31.5 10
250
2 50 125 -55~+150
SBL 1050
50
35
SBL 1060
60
42
Unit
V
V A A W ℃/W ℃ ℃
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B,Oct,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
Min
Reverse voltage
Reverse current Forward voltage
V(BR)
IR VF
SBL1030
SBL1035 SBL1040 SBL1045 SBL1050 SBL1060 SBL1030 SBL1035 SBL1040 SBL1045 SBL1050 SBL1060 SBL1030-1045 SBL1050,1060
IR=0.5mA
VR=30V VR=35V VR=40V VR=45V VR=50V VR=60V IF=10A
30 35 40 45 50 60
Typ Max Unit V
0.45 mA 0.55
V 0.7
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B,Oct,2014
TO-220A Package Outline Dimensions
Symbol
A A1 b b1 c c1 D E E1 e e1 F h L L1 L2
Φ
Dimensions In Millimeters
Min Max
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
8.500
8.900
12.060
12.460
2.540 TYP
4.980
5.180
2.590
2.890
0.000
0.300
13.400
13.800
3.560
3.960
1.000
3.735
3.935
Dimensions In Inches
Min Max
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.394
0.406
0.335
0.350
0.475
0.491
0.100 TYP
0.196
0.204
0.102
0.114
0.000
0.012
0.528
0.543
0.140
0.156
0.039
0.147
0.155
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B,Oct,2014
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