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MBR3045FCT

JCET

SCHOTTKY BARRIER RECTIFIER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR3030, 35, 40, 45, 50FCT SCHOTT...


JCET

MBR3045FCT

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR3030, 35, 40, 45, 50FCT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR VR(RMS) IO IFSM PD RΘJA Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature MBR30 30FCT 30 21 MBR30 35FCT Value MBR30 40FCT MBR30 45FCT MBR30 50FCT Unit 35 40 45 50 V 24.5 28 30 31.5 35 V A 200 A 2 50 125 -55~+150 W ℃/W ℃ ℃ www.cj-elec.com 1 C,Oct,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Device Test conditions Min Typ Max MBR3030FCT Reverse voltage V(BR) MBR3035FCT MBR3040FCT MBR3045FCT MBR3050FCT Reverse current MBR3030FCT MBR3035FCT IR MBR3040FCT MBR3045FCT Forward voltage Typical total capacitance MBR3050FCT MBR3030-45FCT VF1 MBR3050FCT VF2* MBR3030-45FCT MBR3050FCT MBR3030-45FCT Ctot* MB...




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