JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR3030, 35, 40, 45, 50FCT
SCHOTT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR3030, 35, 40, 45, 50FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES z
Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IO
IFSM
PD RΘJA
Tj Tstg
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
MBR30 30FCT
30
21
MBR30 35FCT
Value MBR30 40FCT
MBR30 45FCT
MBR30 50FCT
Unit
35 40 45 50 V
24.5 28 30
31.5 35 V A
200 A
2 50 125 -55~+150
W ℃/W
℃ ℃
www.cj-elec.com
1
C,Oct,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ Max
MBR3030FCT
Reverse voltage
V(BR)
MBR3035FCT MBR3040FCT MBR3045FCT
MBR3050FCT
Reverse current
MBR3030FCT
MBR3035FCT IR MBR3040FCT
MBR3045FCT
Forward voltage Typical total capacitance
MBR3050FCT
MBR3030-45FCT VF1
MBR3050FCT
VF2*
MBR3030-45FCT MBR3050FCT
MBR3030-45FCT Ctot*
MB...