ACE4940M

ACE4940M Dual N-Channel 40-V MOSFET Description The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 40 V VGS ±20 V 8.3 ID A 6.8 IDM 50 A IS 3 A 2.1 PD W 1.3 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.2 1 Packaging Type SOP-8 S1 G1 S2 G2 D1 D1 D2 D2 Ordering information ACE4940M FM + H Halogen - free Pb - free FM : SOP-8 ACE4940M Dual N-Channel 40-V MOSFET VER 1.2 2 ACE4940M Dual N-Channel 40-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage Gate-B...