DatasheetsPDF.com

1N8034-GA

GeneSiC
Part Number 1N8034-GA
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published Jul 15, 2016
Detailed Description 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum op...
Datasheet PDF File 1N8034-GA PDF File

1N8034-GA
1N8034-GA

Overview
1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM IF (Tc=25°C) QC = 650 V = 30 A = 66 nC PIN 1 PIN 2 PIN 3 NC 123 TO – 257 (Isolated Base-plate Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without th...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)