BT169D

R Sensitive Gate SCRs BT169D MAIN CHARACTERISTICS Package IT(RMS) VDRM/VRRM IGT 0.8A 600V 200μA   APPLICATIONS  Half AC switching  Phase control Pin 1 2 3 Description K G A TO-92  ，   RoHS FEATURES  Glass-passivated mesa chip for reliability and uniform  Low on-state voltage and High ITSM  RoHS products SOT-89 ORDER MESSAGE Order codes BT169D-O-T-N-C BT169D-O-T-B-A BT169D-O-O-N-A Marking 3CT06B 3CT06B 3CT06B Halogen Free Package TO-92 TO-92 SOT-89 Packaging Bag Brede Brede ：201510F 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current On-state RMS current ( half sine wave) Non- repetitive surge peak on-state current ( half sine wave ,t=20ms) Peak gate current Average gate power( over any 20ms period) Storage temperature Operation junction temperature Symbol VDRM VRRM IT（AV） IT(RMS) ITSM IGM PG(AV) Tstg TVJ BT169D Value 600 600 0.5 0.8 Unit V V A A 8A 0.5 0.1 -40~150 125 A W ℃ ℃ ELECTRICAL CHARACTERISTIC Parameter Peak Repetitive Blocking Current Peak Repetitive Reverse Current Peak on-state voltage Gate trigger current Gate trigger voltage Holding current Symbol Tests conditions IDRM VDM=VDRM, Tj=125℃, RGK=1KΩ IRRM VRM=VRRM, Tj=125℃, RGK=1KΩ VTM ITM=2A IGT VDM=12V,IT=0.1A VGT VDM=12V,IT=0.1A IH VDM=12V, IGT=1mA Rise of off- state voltage VDM=67% VDRM(MAX), dV/dt Tj=125℃,RGK=1KΩ min 10 - 1...