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B250C1000G Dataheets PDF



Part Number B250C1000G
Manufacturers Vishay
Logo Vishay
Description Glass Passivated Single-Phase Bridge Rectifier
Datasheet B250C1000G DatasheetB250C1000G Datasheet (PDF)

B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G www.vishay.com Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier +~ +~ ~− ~− Case Style WOG PRIMARY CHARACTERISTICS Package WOG IF(AV) VRRM IFSM IR VF at IF = 1.0 A TJ max. Diode variations 1.0 A 65 V, 125 V, 200 V, 400 V, 600 V 45 A 10 μA 1.0 V 125 °C Quad FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability e4 • Typical IR less than 0.1 μA • Solder .

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B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G www.vishay.com Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier +~ +~ ~− ~− Case Style WOG PRIMARY CHARACTERISTICS Package WOG IF(AV) VRRM IFSM IR VF at IF = 1.0 A TJ max. Diode variations 1.0 A 65 V, 125 V, 200 V, 400 V, 600 V 45 A 10 μA 1.0 V 125 °C Quad FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability e4 • Typical IR less than 0.1 μA • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers, and home appliances applications. MECHANICAL DATA Case: WOG Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C1000G Maximum repetitive peak reverse voltage Maximum RMS input voltage R- and C-load Maximum DC blocking voltage Maximum peak working voltage Maximum non-repetitive peak voltage Maximum repetitive peak forward surge current Maximum average forward output current R- and L-load for free air operation at TA = 45 °C C-load VRRM VRMS VDC VRWM VRSM IFRM IF(AV) 65 40 65 90 100 Peak forward surge current single sine-wave on rated load Rating for fusing at TJ = 125 °C (t < 8.3 ms) Minimum series resistor C-load at VRMS = ± 10 % Maximum load capacitance + 50 % - 10 % IFSM I2t RT CL 1.0 5000 Operating junction temperature range Storage temperature range TJ TSTG B80 C1000G 125 80 125 180 200 2.0 B125 C1000G 200 125 200 300 350 10 1.2 1.0 45 10 4.0 B250 C1000G 400 250 400 600 600 8.0 2500 1000 500 - 40 to + 125 - 40 to + 150 B380 C1000G 600 380 600 800 1000 UNIT V V V V V A A A A2s 12  200 μF °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL B40 C1000G B80 C1000G Maximum instantaneous forward voltage drop per diode 1.0 A VF Maximum reverse current at rated repetitive peak voltage per diode TA = 25 °C IR B125 C1000G 1.0 10 B250 C1000G B380 C1000G UNIT V μA Revision: 08-Jul-13 1 Document Number: 88500 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B40 C1000G B80 C1000G B125 C1000G B250 C1000G B380 C1000G UNIT Typical thermal resistance (1) RJA RJL 36 °C/W 11 Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22" (5.5 mm x 5.5 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE B380C1000G-E4/51 1.12 51 BASE QUANTITY 100 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) DELIVERY MODE Plastic bag Bridge Output Full Wave Rectified Current Average (A) 1.2 1.0 Capacitive Load 0.8 0.6 0.375" 0.4 (9.5 mm) 50 to 60 Hz Resistive or Inductive Load 0 - 10 µF 10 - 100 µF > 100 µF P.C.B. 0.2 0 20 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) 40 60 80 100 120 Ambient Temperature (°C) 140 Fig. 1 - Derating Curves Output Rectified Current for B40C1000G...B125C1000G Instantaneous Reverse Current (µA) 50 TJ = 125 °C 10 ms Single Half Sine-Wave 40 30 20 10 0 1 10 100 Number of Cycles at 50 Hz Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Average Forward Output Current (A) 1.2 1.0 Capacitive 0.8 Load 0.6 0.375" 0.4 (9.5 mm) 50 to 60 Hz Resistive or Inductive Load 0 - 10 µF 10 - 100 µF > 100 µF P.C.B. 0.2 0 20 Copper Pads 0.22 x 0.22" (5.5 x 5.5 mm) 40 60 80 100 120 Ambient Temperature (°C) 140 Fig. 2 - Derating Curves Output Rectified Current for B250C1000G...B380C1000G Instantaneous Forward Current (A) 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) 1.4 Fig. 4 - Typical Forward Characteristics Per Diode Revision: 08-Jul-13 2 Document Number: 88500 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G www.vishay.com Vishay Semiconductor.


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