isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance:
RDS(on) ≤0...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance:
RDS(on) ≤0.092Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switch
regulators ·Switching converters, motor drivers, relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation @TC=25℃
57
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 2.19
UNIT ℃/W
18N20
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=10A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VDS=160V; VGS= 0V
VSD
Diode forward voltage
Is=18A; VGS = 0V
18N20
MIN TYP MAX UNIT
200
V
1
3
V
0.092 Ω
±100 nA
250 μA
1.4
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...
