isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Stati...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
17
A
IDM
Drain Current-Single Plused
68
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.5 ℃/W
17N60
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isc N-Channel MOSFET
Transistor
17N60
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= 5V; ID=250µA IS= 17A ;VGS= 0 VGS= 10V; ID= 8.5A VGS= ±30V;VDS= 0 VDS=480V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz...