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13N40 Dataheets PDF



Part Number 13N40
Manufacturers UTC
Logo UTC
Description N-CHANNEL POWER MOSFET
Datasheet 13N40 Datasheet13N40 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 13N40 is universally applied in electronic lamp ballast based on .

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UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 13N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. „ FEATURES * RDS(ON)=0.35Ω @ VGS=10V * High switching speed * 100% avalanche tested „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13N40L-TF3-T 13N40G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-687.a 13N40 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 400 V ±30 V Drain Current Avalanche Energy Continuous (TC=25°C) Pulsed (Note 2) Single Pulsed (Note 3) ID IDM EAS 13 A 52 A 705 mJ Power Dissipation PD 48 W Junction Temperature Storage Temperature Range TJ TSTG +150 -55~+150 °C °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 8.34mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C „ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 60 2.58 UNIT °C/W °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=6.5A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=25V, f=1.0MHz SWITCHING PARAMETERS Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDD=200V, ID=13A, RG=25Ω (Note 1, 2) VDS=320 V, ID=13A, VGS=10 V (Note 1,2) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=13A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temper.


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