Document
UNISONIC TECHNOLOGIES CO., LTD
13N40
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 13N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
FEATURES
* RDS(ON)=0.35Ω @ VGS=10V * High switching speed * 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N40L-TF3-T
13N40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-687.a
13N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
400 V ±30 V
Drain Current Avalanche Energy
Continuous (TC=25°C) Pulsed (Note 2) Single Pulsed (Note 3)
ID IDM EAS
13 A 52 A 705 mJ
Power Dissipation
PD 48 W
Junction Temperature Storage Temperature Range
TJ TSTG
+150 -55~+150
°C °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 8.34mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case
SYMBOL θJA θJC
RATINGS 60 2.58
UNIT °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward Reverse
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
BVDSS IDSS
IGSS
ID=250µA, VGS=0V VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V
VGS(TH) RDS(ON)
VDS=VGS, ID=250µA VGS=10V, ID=6.5A
DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tR
tD(OFF) tF QG
QGS QGD
VDD=200V, ID=13A, RG=25Ω (Note 1, 2)
VDS=320 V, ID=13A, VGS=10 V (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=13A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temper.