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HBR4060

JILIN SINO

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR4060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 40(2×20)A 60 V 175 ℃ 0.68V (...


JILIN SINO

HBR4060

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R SCHOTTKY BARRIER DIODE HBR4060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 40(2×20)A 60 V 175 ℃ 0.68V (@Tj=125℃)   APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications  ,  , (RoHS) FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product ORDER MESSAGE Order codes Marking Package HBR4060Z HBR4060 TO-220 HBR4060ZR HBR4060 TO-220 HBR4060HF HBR4060 TO-220HF HBR4060HFR HBR4060 TO-220HF HBR4060AB HBR4060 TO-3PB HBR4060ABR HBR4060 TO-3PB HBR4060W HBR4060 TO-247 HBR4060WR HBR4060 TO-247 Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) 5.40 g(typ) 5.40 g(typ) (Rev):201408A 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Maximum DC blocking voltage TC=150℃ Average forward (TO-220, per device current TO-3PB,TO-247) TC=125℃ (TO-220HF) per diode Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Storage temperature range MBR4060 Symbol VRRM Value 60 VDC 60 IF(AV) 40 20 IFSM 300 Tj TSTG 175 -40~+150 Unit V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter Tests co...




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