RB421D

SMD Type Schottky Diodes RB421D (KB421D) ■ Features ● Small surface mounting type ● Low reverse current and low forward voltage ● High reliability +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VRM VR Io IFM PD RθJA TJ Tstg Rating 40 40 0.1 1 250 400 125 -55 to 150 Unit V A mW ℃/W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Capacitance between terminals Symbol Test Conditions VR IR= 100 uA IF= 10mA VF IF= 100mA IR VR=10 V CT VR=10 V, f= 1 MHz Min Typ Max Unit 40 0.34 V 0.55 30 uA 6 pF ■ Marking Marking D3C www.kexin.com.cn 1 FORWARD CURRENT IF (mA) SMD Type Diodes Schottky Diodes RB421D (KB421D) ■ Typical Characterisitics Forward Characteristics 100 1000 Reverse Characteristics REVERSE CURRENT IR (uA) ℃ =25℃ =100 T a T a 100 Ta=100 ℃ 10 10 1 Ta=25 ℃ 0.1 1 0 100 200 300 400 500 600 FORWARD VOLTAGE VF (mV) 0.01 0 10 20 30 REVERSE VOLTAGE VR (V) 40 Capacitance Characteristics 40 Ta=25℃ f=1MHz 30 20 10 0 0 5 10 15 20 REVERSE VOLTAGE VR (V) Power Derating Curve 300 250 200 150 100...