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MURF3020CT Dataheets PDF



Part Number MURF3020CT
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Datasheet MURF3020CT DatasheetMURF3020CT Datasheet (PDF)

MURF3020CT thru MURF3060CT ® Pb Free Plating Product MURF3020CT/MURF3040CT/MURF3060CT Pb 30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest P/G technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Ca.

  MURF3020CT   MURF3020CT


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MURF3020CT thru MURF3060CT ® Pb Free Plating Product MURF3020CT/MURF3040CT/MURF3060CT Pb 30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest P/G technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Fully Isolated Molding TO-220FP Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately ITO-220AB Unit:mm Case Case Case Case Positive Negative Doubler Series Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "CT" Suffix "CTA" Suffix "CTD" Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MURF3020CT MURF3040CT MURF3060CT UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125oC VRRM VRMS VDC IF(AV) Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM Maximum Instantaneous Forward Voltage @ 15.0 A Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) VF IR Trr CJ Operating Junction and Storage Temperature Range TJ, TSTG 200 140 200 0.98 400 280 400 30.0 300 1.3 10 100 35-60 150 -55 to +150 600 V 420 V 600 V A A 1.7 V uA uA nS pF oC NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.05 Page 1/2 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ MURF3020CT thru MURF3060CT ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 0 50 100 LEAD TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 150 MURF3020CT 15 MURF3040CT MURF3060CT 1.0 TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 250 200 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 TJ=125oC 10 1 0.1 TJ=25oC 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 JUNCTION CAPACITANCE, pF 10 0.1 1.0 4.0 10 REVERSE VOLTAGE, VOLTS 100 . Rev.05 © 2006 Thinki Semiconductor Co., Ltd. .. Page 2/2 http://www.thinkisemi.com/ .


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