Document
MURF3020CT thru MURF3060CT
®
Pb Free Plating Product
MURF3020CT/MURF3040CT/MURF3060CT
Pb
30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Features Latest P/G technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems
Mechanical Data Case: Fully Isolated Molding TO-220FP Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately
ITO-220AB
Unit:mm
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CT"
Suffix "CTA"
Suffix "CTD"
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MURF3020CT MURF3040CT MURF3060CT UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current TC=125oC
VRRM VRMS VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage @ 15.0 A
Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
VF
IR Trr CJ
Operating Junction and Storage Temperature Range
TJ, TSTG
200 140 200
0.98
400 280 400 30.0
300
1.3 10 100 35-60 150 -55 to +150
600 V 420 V 600 V
A
A
1.7 V uA uA nS pF oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
Page 1/2
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
MURF3020CT thru MURF3060CT
®
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
IINSTANTANEOUS FORWARD CURRENT, AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5 60 Hz Resistive or Inductive load
0
0 50
100
LEAD TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
150
MURF3020CT 15
MURF3040CT
MURF3060CT 1.0
TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
250
200
150
100
50
0 1 10 100 NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100 TJ=125oC
10
1
0.1 TJ=25oC
0.01 0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p
100
JUNCTION CAPACITANCE, pF
10 0.1
1.0 4.0 10 REVERSE VOLTAGE, VOLTS
100
.
Rev.05 © 2006 Thinki Semiconductor Co., Ltd.
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