JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD301 SCHOTTKY BARRIER DIODE
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD301
SCHOTTKY BARRIER DIODE
FEATURES Small Surface Mounting Type High Reliability
MARKING: 4T
SOT-23
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Maximum Repetitive Reverse Voltage
IO Forward Current
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 30 50 200 500 125
-55~+150
Unit V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Forward voltage
Total capacitance
Symbol V(BR) IR
VF
Ctot
Test conditions IR=10μA VR=25V IF=1mA IF=10mA VR=15V,f=1MHz
Min Typ Max 30
200 0.45 0.6 1.5
Unit V nA
V
pF
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1
C,Oct,2015
Typical Characteristics
FORWARD CURRENT I (mA) F
Forward Characteristics
50
10
=25℃
=100℃
1
T a
T a
0.1
0.01 0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE V (mV) F
Capacitance Characteristics
4
T =25℃ a
f=1MHz
3
2
1
0 0 5 10 15 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
REVERSE CURRENT I (uA) R
Reverse Characteristics
10
1
T =100℃ a
0.1
T =25℃ a
0.01
1E-3 0
250
5 10 15 20 25
REVERSE VOLTAGE V (V) R
30
Power Derating Curve
200
150
100
50
0 0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃) a
CAPACITANCE BETWEEN TERMINALS C (pF)
T
www.cj-elec.com
2
C,Oct,2015
SOT-23 Package Outline Dimensions
SOT-23 Suggested Pad Layout
Symbol
A A1 A2 ...