RB715F

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes RB715F SCHOTTKY BARRIER DIODE FEATURES: Extra small power mold type Low VF High reliability MARKING: 3D SOT-323 1 3 2 Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25 ℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage &1uRrQreUnHtS#HWWLWLYHPPeVak )orward 6urge Average forward current VR IFSM IO Power dissipation PD Thermal Resistance Junction to Ambient 5ș-$ Junction temperature Tj Storage temperature Tstg Limit 40 40 200 30 200 500 125 -55+~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Forward voltage Capacitance between terminals Symbol IR VF CT Test conditions VR=10V IF=1mA VR=1V, f=1MHz Min Typ 2.0 Unit V V mA mA mW ℃/W ℃ ℃ Max 1 0.37 Unit μA V pF www.cj-elec.com 1 D,Oct,2015 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (uA) R Typical Characteristics Forward Characteristics 200 100 10 1 0.1 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 10 1 0.1 0.01 1E-3 0 Reverse Characteristics Ta=100℃ Ta=25℃ 10 20 30 REVERSE VOLTAGE V (V) R 40 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 4 Ta=25℃ f=1MHz 3 2 1 0 5 10 15 20 REVERSE VOLTAGE V (V) R Power Derating Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) www.cj-elec.com 2 D,Oct,2015 SOT-...