JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
RB706F-40 Schottky Barrier...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
RB706F-40
Schottky Barrier Diode
FEATURES z Small package z Low VF and low IR z High reliability
MAKING: 3J·
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation
TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature
Storage temperature
Solid dot = Green molding compound device,if none, the normal device.
Symbol VRM VR IO IFSM PD RθJA
Tj Tstg
Limit 45 40 30 200 200 500
125 -55+150
Unit V V mA mA mW
℃/W
℃ ℃
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Forward voltage Reverse current Capacitance between terminals
VF IR CT
0.37 V 1 μA
2 pF
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1
Conditions IF=1mA VR=10V
VR=1V, f=1MHZ
D,Oct,2015
Typical Characteristics
FORWARD CURRENT I (mA) F
Forward Characteristics
30
10
T =100℃ a
1
T =25℃ a
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE V (V) F
Capacitance Characteristics
4.0
T =25℃ a
f=1MHz
3.5
3.0
2.5
2.0
1.5
1.0 0
5 10 15 20 25
REVERSE VOLTAGE V (V) R
30
POWER DISSIPATION P (W) D
REVERSE CURRENT I (uA) R
Reverse Characteristics
10
T =100℃ a
1
0.1
T =25℃
0.01
a
1E-3 0
0.30 0.25 0.20 0.15 0.10 0.05 0.00
0
10 20 30
REVERSE VOLTAGE V (V) R
Power Derating Curve
40
25 50 75 100
AMBIENT TEMPERATURE T (℃) a
125
CAPACITANCE BETWEEN TERMINALS C (pF)
T
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2
D,Oct,2015...
