DatasheetsPDF.com

RB521CS-30

JCET

Schottky barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes RB521CS-30 Schottky barrier diode...


JCET

RB521CS-30

File Download Download RB521CS-30 Datasheet


Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-923 Plastic-Encapsulate Diodes RB521CS-30 Schottky barrier diode FEATURES z Low reverse current and low forward voltage z High reliability MARKING: F SOD-923 - + Maximum Ratings (Ta=25℃) Parameter Symbol DC reverse voltage Mean rectifying current Peak forward surge current @t=8.3ms VR IO IFSM Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature PD RθJA Tj Tstg Limit 30 100 0.5 100 1000 125 -50~+150 Electrical characteristic (Ta=25℃) Parameter Symbol Min Typ Max Unit VF1 0.37 Forward voltage Reverse current VF2 0.5 V IR 2 μA www.cj-elec.com 1 Unit V mA A mW ℃/W ℃ ℃ Conditions IF1=10mA IF2=100mA VR1=10V E,Mar,2015 Typical Characteristics Forward Characteristics 100 =100℃ FORWARD CURRENT IF (mA) 10 1 T a =75℃ T a =25℃ 0.1 T a 0.01 0 100 200 300 400 FORWARD VOLTAGE VF (mV) 500 REVERSE CURRENT IR (uA) Reverse Characteristics 1000 Ta=100℃ 100 10 Ta=75℃ 1 0.1 T =25℃ a 0.01 0.1 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) Capacitance Characteristics 25 Ta=25℃ f=1MHz 20 15 10 5 0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE VR (V) 125 100 75 50 25 0 0 Power Derating Curve 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) 125 www.cj-elec.com 2 E,Mar,2015 SOD-923 Package Outline Dimensions Symbol A A1 b c D E E1 θ Dimensions In Millimeters Min. Max. 0.350 0.430 0.000 0.050 0.170 0.270 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)