DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF857; BF858; BF859 NPN high-voltage transistors
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF857; BF858; BF859
NPN high-voltage
transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors
NPN high-voltage
transistors
Product specification
BF857; BF858; BF859
DESCRIPTION
NPN transistors in a TO-202 plastic package. An A-version with e-b-c pinning instead of e-c-b is available on request.
APPLICATIONS For use in video output stages of black and white and
colour television receivers.
PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to mounting base 3 base
handbook, halfpage
1 23
MBH794
Fig.1 Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage BF857
BF858
BF859
VCEO
collector-emitter voltage BF857
BF858
BF859
ICM peak collector current Ptot total power dissipation hFE DC current gain Cre feedback capacitance fT transition frequency
CONDITIONS open emitter
open base
Tmb ≤ 75 °C IC = 30 mA; VCE = 10 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz
MIN. MAX. UNIT
− 160 V − 250 V − 300 V
− 160 V
− 250 V
− 300 V
− 300 mA
−6W
26 −
− 3 pF
90 −
MHz
1996 Dec 09
2
Philips Semiconductors
NPN high-voltage
transistors
Product specification
BF857; BF858; BF859
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO IC ICM IBM Ptot
Tstg Tj Tamb
collector-base voltag...