JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Diodes
BAT54M SCHOTTKY BARRIER DIODE
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Diodes
BAT54M
SCHOTTKY BARRIER DIODE
FEATURE z Extremely Fast Switching Speed
Low Forward Voltage
MARKING: L1
SOT-723
1 3
2
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature
Storage Temperature
Symbol VRRM VRWM VR(RMS)
IO IFSM IFRM PD RθJA
Tj Tstg
Limit
30
21 200 600 300 150 667 125 -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Symbol V(BR) IR
Test conditions IR=100μA VR=25V IF=0.1mA IF=1mA
Forward voltage
VF IF=10mA IF=30mA
Total capacitance Reverse recovery time
IF=100mA Ctot VR=1V,f=1MHz trr IF= IR=10mA, IR(REC)=1mA
Min 30
Typ
Unit
V
V mA mA mA mW ℃/W ℃
℃
Max
2 0.24 0.32 0.4 0.5
1 10 5
Unit V μA
V
pF ns
www.cj-elec.com
1
F,Oct,2015
Typical Characteristics
FORWARD CURRENT I (mA) F
200
Pulsed
100
Forward Characteristics
=100℃
T a
10
=25℃
T a
1
0.1 0
100 200 300 400
FORWARD VOLTAGE V (mV) F
500
600
Capacitance Characteristics
20
T =25℃ a
f=1MHz
15
10
5
0 0 5 10 15 20 25 30
REVERSE VOLTAGE V (V) R
REVERSE CURRENT I (uA) R
300
Pulsed
100
Reverse
Characteristics
T =100℃ a
10
1
T =25℃ a
0.1
0.01 0
10 20...