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BAT54M

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Diodes BAT54M SCHOTTKY BARRIER DIODE FEA...


JCET

BAT54M

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Diodes BAT54M SCHOTTKY BARRIER DIODE FEATURE z Extremely Fast Switching Speed Low Forward Voltage MARKING: L1 SOT-723 1 3 2 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR(RMS) IO IFSM IFRM PD RθJA Tj Tstg Limit 30 21 200 600 300 150 667 125 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Symbol V(BR) IR Test conditions IR=100μA VR=25V IF=0.1mA IF=1mA Forward voltage VF IF=10mA IF=30mA Total capacitance Reverse recovery time IF=100mA Ctot VR=1V,f=1MHz trr IF= IR=10mA, IR(REC)=1mA Min 30 Typ Unit V V mA mA mA mW ℃/W ℃ ℃ Max 2 0.24 0.32 0.4 0.5 1 10 5 Unit V μA V pF ns www.cj-elec.com 1 F,Oct,2015 Typical Characteristics FORWARD CURRENT I (mA) F 200 Pulsed 100 Forward Characteristics =100℃ T a 10 =25℃ T a 1 0.1 0 100 200 300 400 FORWARD VOLTAGE V (mV) F 500 600 Capacitance Characteristics 20 T =25℃ a f=1MHz 15 10 5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE V (V) R REVERSE CURRENT I (uA) R 300 Pulsed 100 Reverse Characteristics T =100℃ a 10 1 T =25℃ a 0.1 0.01 0 10 20...




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