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B5819W

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DI...


JCET

B5819W

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. SOD-123 MARKING: B5817W:SJ B5818W:SK B5819W:SL The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol B5817W B5818W Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RθJA TJ TSTG 20 20 14 30 30 21 1 9 1.5 500 200 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) B5819W 40 40 28 Unit V V V A A A mW ℃/W ℃ ℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA B5817W B5818W B5819W VR=20V VR=30V VR=40V B5817W B5818W B5819W B5817W IF=1A IF=3A B5818W IF=1A IF=3A B5819W IF=1A IF=3A VR=4V, f=1MHz Min 20 30 40 Max Unit V 1 0.45 0.75 0.55 0.875 0.6 0.9 120 mA V V V pF www.cj-elec.com 1 D,Mar,2015 Typical Characteristics ...




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