BUK7504-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 G...
BUK7504-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 3; see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 175 °C; see Figure 11;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
Min Typ Max Unit - - 40 V [1] - - 75 A - - 300 W
- - 8.5 mΩ
- 3.9 4.5 mΩ
NXP Semiconductors
BUK7504-40A
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 7...