ACE7331M

ACE7331M P-Channel 30-V MOSFET Description The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper lead frame DFN3x3-8L saves board space Fast switching speed High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS -30 V VGS ±20 V -13.4 ID -11.0 A IDM ±50 A IS -2.1 A 3.5 PD W 2.0 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 35 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN3*3-8L ACE7331M P-Channel 30-V MOSFET Ordering information ACE7331M NN + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 2 ACE7331M P-Channel 30-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltag...