ACE7332M

ACE7332M N-Channel 30-V (D-S) MOSFET Description The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. Key Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Features  VDS(V)=30V  ID=15A (VGS=10V)  RDS(ON)＜8.5mΩ (VGS=10V)  RDS(ON)＜13mΩ (VGS=4.5V) PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) 13 @ VGS = 10V 14 30 18 @ VGS = 4.5V 12 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC TA=25 OC TA=70 OC Drain Current (Pulse) *B Power Dissipation TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDS 30 V VGS ±20 V 15 ID 12 A IDM 50 3.5 PD W 2 TJ,Tstg -55 to 150 OC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State Symbol RθJA Max 35 81 Unit °C/W Packaging DFN3x3-8L TypeOrdering information ACE7332M XX + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 1 ACE7332M N-Channel 30-V (D-S) MOSFET Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20V Min. Typ. 1 Zero ate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 ...