Document
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20V ID=-5.5A (VGS=-10V) RDS(ON)<55mΩ (VGS=-10V) RDS(ON)<58mΩ (VGS=-4.5V) RDS(ON)<80mΩ (VGS=-2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS VGSS
ID
-20 V ±12 V -5.5
A -4.4
Drain Current (Pulse) * B
IDM -25 A
Power Dissipation
TA=25 OC TA=70 OC
PD
2 W
1.5
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE4953B XX + H
Halogen - free Pb - free FM : SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On-State Resistance
Gate Threshold Voltage
V(BR)DSS IDSS IGSS
RDS(ON)
VGS(th)
VGS=0V, ID=-250uA VDS=-20V, VGS=0V VGS=±12V, VDS=0V VGS=-10V, ID=-6A VGS=-4.5V, ID=-4.7A VGS=-2.5V, ID=-1A VDS=VGS, IDS=-250uA
-20 -0.6
45 51 65 -0.8
V -1 uA 100 nA 55 58 mΩ 80 -1.4 V
Forward Transconductance Diode Forward Voltage
Maximum Body-Diode Continuous Current
gFS VSD
IS
VDS=-5V, ID=-5.5A VGS=0V, ISD=-1.7A
13 S -0.8 -1.1 V
1.7 A
Switching
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn- Off Rise Time
Qg Qgs Qgd td(on) tr td(off) tf
VDS=-10V, VGS=-4.5V, ID=-4.5A
VGS=-4.5V, VDS=-10V, RL=10Ω, RGEN=6Ω, ID=-1A
Dynamic
8.92 1.8 2.04 16.08 5.28 37.6 7.28
11.6 2.34 2.65 32.16 10.56 75.2 14.5
nC ns
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS=-10V, VGS=0V f=1MHz
800 960 131 pF 103
Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics
VER 1.2 3
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics
VER 1.2 4
Packing Information SOP-8
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Unit: mm
VER 1.2 5
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ACE Technology Co., LTD. http://www.ace-ele.com/
VER 1.2 6
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