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ACE4953B Dataheets PDF



Part Number ACE4953B
Manufacturers ACE Technology
Logo ACE Technology
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet ACE4953B DatasheetACE4953B Datasheet (PDF)

ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-20V  ID=-5.5A (VGS=-10V)  RDS(ON)<55mΩ (VGS=-10V)  RDS(ON)<58mΩ (VGS=-4.5V)  RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continu.

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ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-20V  ID=-5.5A (VGS=-10V)  RDS(ON)<55mΩ (VGS=-10V)  RDS(ON)<58mΩ (VGS=-4.5V)  RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.5 A -4.4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 VER 1.2 1 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE4953B XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On-State Resistance Gate Threshold Voltage V(BR)DSS IDSS IGSS RDS(ON) VGS(th) VGS=0V, ID=-250uA VDS=-20V, VGS=0V VGS=±12V, VDS=0V VGS=-10V, ID=-6A VGS=-4.5V, ID=-4.7A VGS=-2.5V, ID=-1A VDS=VGS, IDS=-250uA -20 -0.6 45 51 65 -0.8 V -1 uA 100 nA 55 58 mΩ 80 -1.4 V Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current gFS VSD IS VDS=-5V, ID=-5.5A VGS=0V, ISD=-1.7A 13 S -0.8 -1.1 V 1.7 A Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn- Off Rise Time Qg Qgs Qgd td(on) tr td(off) tf VDS=-10V, VGS=-4.5V, ID=-4.5A VGS=-4.5V, VDS=-10V, RL=10Ω, RGEN=6Ω, ID=-1A Dynamic 8.92 1.8 2.04 16.08 5.28 37.6 7.28 11.6 2.34 2.65 32.16 10.56 75.2 14.5 nC ns Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=-10V, VGS=0V f=1MHz 800 960 131 pF 103 Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 Packing Information SOP-8 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Unit: mm VER 1.2 5 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6 .


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