ACE4922

ACE4922 Dual N-Channel Enhancement Mode MOSFET Description The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features  N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability Application  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID 1.2 A 0.9 Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation TA=25℃ TA=70℃ PD 0.35 W 0.19 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC VER 1.3 1 Packaging Type SC-70-6 654 123 ACE4922 Dual N-Channel Enhancement Mode MOSFET SC-70-6 Description 1 Source 1 ...