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ACE2391M Dataheets PDF



Part Number ACE2391M
Manufacturers ACE Technology
Logo ACE Technology
Description N-Channel 150-V MOSFET
Datasheet ACE2391M DatasheetACE2391M Datasheet (PDF)

ACE2391M N-Channel 150-V MOSFET Description ACE2391M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Applications:  PoE Power Sourcing Equipment  PoE Powered Devices  Telecom DC/DC converters  White LED boost converters Absolute M.

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ACE2391M N-Channel 150-V MOSFET Description ACE2391M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features  Low rDS(on) trench technology  Low thermal impedance  Fast switching speed Applications:  PoE Power Sourcing Equipment  PoE Powered Devices  Telecom DC/DC converters  White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current b TA=25°C TA=70°C Continuous Source Current (Diode Conduction) a Power Dissipationa TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 150 ±20 1.1 0.9 5 1.6 1.3 0.8 -55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t<=10sec Steady State Symbol Maximum Unit RθJA 100 °C/W 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE2391M N-Channel 150-V MOSFET Packaging Type Ordering information ACE2391M BM + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ReverseTransfer Capacitance Symbol V GS (th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 120 V, VGS = 0 V VDS = 120V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1.1 A VGS = 4.5 V, ID = 0.8 A VDS = 15 V, ID = 1.1 A IS = 0.8 A, VGS = 0 V Dynamic VDS = 75 V, VGS = 4.5 V, ID = 1.1 A VDD = 75 V, RL = 75 Ω , ID = 1.1 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f =1 MHz Min. Typ. Max. Unit 1V ±100 nA 1 uA 25 5A 0.7 Ω 1.2 5S 0.75 V 3.5 1.3 nC 1.5 4.4 4.9 nS 18.4 4.9 356 38 pF 17 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 2 Typical Performance Characteristics (N-Channel) ACE2391M N-Channel 150-V MOSFET ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 3 Typical Performance Characteristics ACE2391M N-Channel 150-V MOSFET Qg - Total Gate Charge (nC) 7. Gate Charge TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs Junction Temperature VDS Drain to Source Voltage (V) 9. Safe Operating Area t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 4 Packing Information STO-23-3 ACE2391M N-Channel 150-V MOSFET SYMBOLS A A1 A2 b C D E E1 e e1 L L1 L2 R Θ Θ1 MILLIMETERS MIN NOM MAX 0.935 0.95 1.10 0.01 0.10 0.85 0.90 0.925 0.30 0.40 0.50 0.10 0.15 0.25 2.70 2.90 3.10 2.60 2.80 3.00 1.40 1.60 1.80 0.95 BSC 1.90 BSC 0.30 0.40 0.60 0.60REF 0.25BSC 0.10 0° 4° 8° 7°NOM VER 1.1 5 ACE2391M N-Channel 150-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6 .


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