Document
ACE2391M
N-Channel 150-V MOSFET
Description ACE2391M uses advanced trench technology to provide excellent RDS(ON). This device particularly
suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology Low thermal impedance Fast switching speed
Applications:
PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta Pulsed Drain Current b
TA=25°C TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
150 ±20 1.1 0.9
5 1.6 1.3 0.8 -55 to 150
Unit V
A A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient a
t<=10sec Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
VER 1.1 1
ACE2391M
N-Channel 150-V MOSFET
Packaging Type
Ordering information
ACE2391M BM + H
Halogen - free Pb - free
BM : SOT-23-3
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ReverseTransfer Capacitance
Symbol
V GS (th) IGSS
IDSS ID(on)
rDS(on) gfs VSD
Qg Qgs Qgd td(on) tr td(off)
tf Ciss Coss Crss
Conditions Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 120 V, VGS = 0 V VDS = 120V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 1.1 A VGS = 4.5 V, ID = 0.8 A VDS = 15 V, ID = 1.1 A IS = 0.8 A, VGS = 0 V
Dynamic
VDS = 75 V, VGS = 4.5 V, ID = 1.1 A
VDD = 75 V, RL = 75 Ω , ID = 1.1 A, VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
Min. Typ. Max. Unit
1V ±100 nA 1 uA 25
5A 0.7 Ω 1.2
5S 0.75 V
3.5 1.3 nC 1.5 4.4 4.9
nS 18.4 4.9 356 38 pF 17
Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
VER 1.1 2
Typical Performance Characteristics (N-Channel)
ACE2391M
N-Channel 150-V MOSFET
ID-Drain Current (A) 1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics
VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage
VDS - Drain-to-Source Voltage (V) 5. Output Characteristics
VDS-Drain-to-Source Voltage (V) 6. Capacitance
VER 1.1 3
Typical Performance Characteristics
ACE2391M
N-Channel 150-V MOSFET
Qg - Total Gate Charge (nC) 7. Gate Charge
TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V) 9. Safe Operating Area
t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation
t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient
VER 1.1 4
Packing Information STO-23-3
ACE2391M
N-Channel 150-V MOSFET
SYMBOLS
A A1 A2 b C D E E1 e e1 L L1 L2 R Θ Θ1
MILLIMETERS
MIN NOM MAX
0.935
0.95
1.10
0.01 0.10
0.85 0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95 BSC
1.90 BSC
0.30 0.40 0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
VER 1.1 5
ACE2391M
N-Channel 150-V MOSFET
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ACE Technology Co., LTD. http://www.ace-ele.com/
VER 1.1 6
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